Are the constraints of traditional memory architectures holding back your groundbreaking designs? New, revolutionary phase change memory (PCM) merges the best attributes of NOR, NAND, and RAM, offering unprecedented capability in a single, nonvolatile memory chip.
Phase-change memory (also known as PCME, PRAM, PCRAM, Ovonic Unified Memory, Chalcogenide RAM and C-RAM) is a type of non-volatile computer memory. PRAMs exploit the unique behavior ofchalcogenide glass. Heat produced by the passage of an electric current switches this material between two states, crystalline and amorphous.
Recent versions can achieve two additional distinct states, in effect doubling their storage capacity. PRAM is one of several new memory technologies competing in the non-volatile role with the almost universal flash memory. The latter technology has a number of practical problems that these replacements hope to address.
Serial PCM for Design Simplicity
Our phase change memory (PCM) combines the best traits of traditional memory technologies into a single, nonvolatile device with a straightforward serial interface. Ideal for high-density SPI architectures, P5Q products simplify design, improve system performance, and extend the capabilities of a wide variety of applications
Parallel PCM for Performance and Endurance
Our P8P phase change memory (PCM) combines the best traits of traditional memory technologies into a single, nonvolatile device with a performance-boosting parallel interface. Ideal for high-end high performance embedded applications, second-generation P8P products increase performance, improve endurance, and simplify software management.
Features | Benefits |
---|---|
Density: 128Mb (90nm lithography) | Supports growing high density embedded serial market |
I/O bus width: quad (single/dual supported)
| High performance to match leading-edge serial NOR |
Package: SOIC-16 | Standard SPI package |
Programming time: 0.9MB/sec. | Up to 3x improvement vs. 65nm SPI NOR |
Byte-alterable | Improves system performance by not having to perform erase operations |
Endurance: 1,000,000 cycles | Reduces system and software management. Ideal for write intensive applications |
Single supply voltage: 2.7 - 3.6V | Supports full 3.3V voltage range |
Temperature range: -40ºC to +85º & 0ºC to +70º | Supports industrial or commercial temperature for a wide variety of embedded applications |
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